| 摘要 |
A Read-Only Memory (ROM) cell (9) includes a first control gate (36) dielectrically disposed atop a first portion (34A) of a channel (34), and a second control gate (39) dielectrically disposed atop a second portion (34B) of the channel (34). Addressing of the ROM cell (9) involves a simultaneous energization of both the control gates (36 and 39). The energization of only one control gate, but not both, cannot activate the ROM cell (9). ROM cells of the present invention can be arranged in a matrix of rows and columns. The second control gates (39) in each of the memory cells in a row of the matrix can be electrically connected together, and the first control gates (36) of each of the memory cells in a column can be electrically connected together. Addressing of each of the ROM cell (9) in the matrix is simply the simultaneous energization of a pair of the connected control gates (36 and 39) criss-crossing the underlying memory cell. |
