PROCESS FOR PROFILING THE CHARGE CARRIERS LIFE-TIME IN A SEMICONDUCTOR

摘要

The invention relates to a process for producing vertical and/or lateral profiles of the lifetime of minority charge carriers in a semiconductor. The charge carrier lifetime is reduced throughout the semiconductor in a conventional manner by producing lattice faults using electron beams or gamma rays. The charge carrier lifetime is then increased to a predetermined value by supplying heat at specified points in the semiconductor, the charge carrier lifetime being increased by annealing out the faults produced by the irradiation.