| 摘要 |
PURPOSE:To form a thin-film device capable of reducing the number of crucibles as the vaporization source when an electrode and the thin film are formed by utilizing the ICB method (ion-cluster beam method) and capable of forming the electrode without decreasing the permittivity of a dielectric thin film. CONSTITUTION:A substrate 4 consists of a silicone wafer, a lower electrode 41 of platinum is formed on the substrate 4, and a ferroelectric thin film 5 of PZT and an upper electrode 51 of a Ti/TiN layer are successively formed by the ICB method in the same vacuum vessel. Since the upper electrode 51 consists of Ti and TiN and Ti is one of the materials constituting PZT, the same crucible as the vaporization source is used when the electrode 51 and thin film 5 are formed by utilizing the ICB method. The thin film 5 and then the electrode 51 are formed in the same vacuum vessel, the surface of the thin film 5 is not oxidized by the atmosphere, and the permittivity is not decreased. |
