发明名称 Polarized surface-emitting laser
摘要 A vertical-cavity, surface-emitting semiconductor diode laser having a monolithic and planar surface and having lateral anisotropy in order to control the polarization of the emitted beam of light. The diode laser includes a body of a semiconductor material having an active region therein which is adapted to generate radiation and emit the radiation from a surface of the body, and a separate reflecting mirror at opposite sides of the active region with at least one of the mirrors being partially transparent to the generated light to allow the light generated in the active region to be emitted therethrough. The anisotropy may be provided by utilizing anisotropy in the atomic or molecular structure of the materials forming the laser, or by anisotropic patterning or deliberate offset alignment in processing of the laser or through anisotropic structures in the laser cavity to control the polarization of the emitted beam.
申请公布号 US5331654(A) 申请公布日期 1994.07.19
申请号 US19930026806 申请日期 1993.03.05
申请人 PHOTONICS RESEARCH INCORPORATED 发明人 JEWELL, JACK L.;OLBRIGHT, GREG R.
分类号 H01S5/028;H01S5/042;H01S5/10;H01S5/183;H01S5/32;H01S5/42;(IPC1-7):H01S3/10 主分类号 H01S5/028
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