发明名称 Ionized metal cluster beam systems and methods
摘要 Ionized metal cluster beam deposition of metal bumps on substrates such as multi-chip modules and integrated circuit chips is enhanced. The present invention discloses wet etching techniques for removing unwanted metal deposited on the substrate around bumps, multiple sources for depositing alloyed (tin-lead) bumps with constant composition, and single or multiple sources for directing a cluster beam through an aperture to deposit metal on a substrate and directing an ion beam at the aperture to remove metal deposited therein.
申请公布号 US5331172(A) 申请公布日期 1994.07.19
申请号 US19930128975 申请日期 1993.09.29
申请人 MICROELECTRONICS AND COMPUTER TECHNOLOGY CORPORATION;HUGHES AIRCRAFT COMPANY 发明人 KUMAR, NALIN;XIE, CHENGGANG;GORUGANTHU, RAMA R.;GHAZI, MOHAMMED K.
分类号 H01L21/60;H01L23/485;H05K3/00;(IPC1-7):H01J37/30 主分类号 H01L21/60
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