| 摘要 |
Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors. The high voltage stand-off characteristics of silicon-on-sapphire thereby provides for the construction of superior electrostatically driven devices and sensors capable of being driven at significantly higher applied potentials since silicon-on-sapphire has demonstrated a capability for building in the range of hundreds of Angstroms, or thick, in the range of microns very high speed, low power, very densely packed integrated circuits using standard silicon processing techniques. As a consequence, the electrostatically driven devices, micromotors, can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.
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