发明名称 Diode addressing structure for addressing an array of transducers
摘要 The present invention is to make a switch out of two diodes to read out a third photosensitive transducer which integrates and stores the photon-generated carriers. The switching diodes are arranged so that during their on time, the switching resistance remains linear and constant throughout the photosensitive transducer readout time independent of the number of photon-generated carriers that are stored in the photosensitive transducer. To maintain a low constant on resistance, the two switching diodes in series are pulsed simultaneously with complementary pulses applied to the two terminals of the series diodes to forward bias them during the readout period. The third is a photosensitive transducer, which is connected to the series node of the switching diodes such that the photosensitive diode is always in a reversed bias condition, whether it is in a readout or integration mode. The remaining terminal of the diode is connected to an output circuit which detects the photon-generated carriers when the switching diodes are pulsed in a forward biased condition during the readout period. Then, during the integration mode, the pulse is removed, the switching diodes are reverse biased, and the photosensitive transducer accumulates the photon-generated carriers.
申请公布号 US5331145(A) 申请公布日期 1994.07.19
申请号 US19930056356 申请日期 1993.04.30
申请人 EG&G RETICON CORPORATION 发明人 WECKLER, GENE P.;TANAKA, SATORU C.
分类号 H04N5/335;H04N5/369;(IPC1-7):H01J40/14 主分类号 H04N5/335
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