发明名称 |
Semiconductor device resistant to slip line formation |
摘要 |
A semiconductor substrate allowing prevention of the breakdown voltage degradation of a gate oxide film and having a prescribed mechanical strength in order to cope with increase in the diameters of wafers corresponding to reduction in the dimensions of semiconductor devices and improvement in productivity, and a Bi-CMOS semiconductor device allowing electrical characteristics to be maintained in any of a bipolar transistor and a field effect transistor are provided. An epitaxial layer is formed on a silicon wafer formed by means of CZ method. A silicon wafer formed by means of FZ method is joined onto the epitaxial layer. An npn bipolar transistor is formed in the epitaxial layer. An n channel MOS transistor and a p channel MOS transistor are formed in the silicon wafer.
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申请公布号 |
US5331193(A) |
申请公布日期 |
1994.07.19 |
申请号 |
US19930017164 |
申请日期 |
1993.02.12 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MUKOGAWA, YASUKAZU |
分类号 |
H01L27/06;(IPC1-7):H01L29/360;H01L29/380;H01L29/730 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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