发明名称 Method of forming patterns and apparatus for carrying out the same
摘要 PCT No. PCT/JP92/01200 Sec. 371 Date May 18, 1993 Sec. 102(e) Date May 18, 1993 PCT Filed Sep. 21, 1992 PCT Pub. No. WO93/06618 PCT Pub. Date Jan. 4, 1993.A method of forming patterns and an apparatus for carrying out the same whereby semiconductor integrated circuits and the like are manufactured using reduction projection alignment. The invention primarily involves projecting patterns of a first substrate onto the surface of a second substrate via an optical projector to form a projection image of the patterns on the second substrate surface. A phase difference pattern is furnished on the plane or its equivalent where the patterns of the first substrate are located. The phase difference pattern affords a predetermined phase difference to the light passing therethrough. Light is irradiated at the phase difference pattern via the optical projector to project the phase difference pattern onto a detecting plane in the position equivalent to the surface of the second substrate. This forms a projection image of the phase difference pattern on the detecting plane. An optical detector is used to detect the light intensity distribution of the projection image of the phase difference pattern projected onto the detecting plane. The detected light intensity distribution is represented by detection signals which are processed so as to obtain the relative positional relationship between the focal plane of the patterns and the detecting plane by use of the optical projector. Finally, the position of the second substrate is controlled so that the position of the detecting plane coincides with that of the focal plane on the basis of the relative positional relationship obtained.
申请公布号 US5331369(A) 申请公布日期 1994.07.19
申请号 US19930050324 申请日期 1993.05.18
申请人 HITACHI, LTD. 发明人 TERASAWA, TSUNEO;HAMA, KATSUNOBU;KATAGIRI, SOICHI
分类号 G03F9/00;H01L21/68;(IPC1-7):G03B27/42;G03B27/72;G03B27/28 主分类号 G03F9/00
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