| 摘要 |
A method for fabricating a semiconductor device, adapted for a MOS type DRAM having a grooved cell capacitor portion formed on a main surface of a semiconductor substrate, including the steps of: forming a highly concentrated first layer of the same conductivity type as that of a semiconductor substrate on a desired portion with an oxidization-resistant first insulating film as a mask, and performing thermal oxidization to form a field oxidized film; removing the first insulating film; forming a second insulating film; forming an opening on the second insulating film at the portion which is in a close proximity to the field oxidized film; etching the semiconductor substrate to form a groove; performing oblique rotational ion injection into a portion other than an upper side wall of the groove with the second insulating film as a peak-shaped mask, forming only on a desired region a highly concentrated second layer of the same conductivity type as that of the semiconductor substrate; removing the second insulating film, forming a highly concentrated third layer of an opposite conductivity type to that of the semiconductor substrate at least on the entire side wall of the groove; and forming a high dielectric film and a conductive electrode in the groove.
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