发明名称 |
Planar epitaxial films of SnO2 |
摘要 |
A planar epitaxial film of tin oxide has low defect density, high purity, crystalline rutile unit cell structure, one crystalline orientation, controlled stoichiometry, extended lateral dimensions, extremely smooth surface morphology, a high degree of atomic order extending to the surface of the film and is colorless and transparent. The film is made by a method which includes reactive sputter deposition. The films can be used in chemical sensors as well as in numerous other applications.
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申请公布号 |
US5330855(A) |
申请公布日期 |
1994.07.19 |
申请号 |
US19910764203 |
申请日期 |
1991.09.23 |
申请人 |
THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE |
发明人 |
SEMANCIK, STEPHEN;CAVICCHI, RICHARD E. |
分类号 |
C30B23/02;G01N31/22;(IPC1-7):B32B7/02 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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