| 摘要 |
<p>PURPOSE:To provide a semiconductor memory device in which the writing and the erasing are performed with an FN current, which is low in power consumption, the tunnel insulating film of which is prevented from being deteriorated, in a virtual ground array type semiconductor recording device, and also provide a drive system therefor. CONSTITUTION:Either one of the source region 2 side or the drain region 3 side of the tunnel insulating film 5 of a transistor memory having a floating gate 6 is formed a thick insulating film 5a. For this drive system, a control gate is brought into a high potential by injecting electrons with an FN current, thereby making the state of erasing, and the drain region 3 and the source region 2 are brought into a high potential with respect to the control gate 8 for every cell to draw out electrons, thereby making the state of writing.</p> |
