| 摘要 |
PURPOSE:To improve a crystallizability and a quality of an indium gallium nitride (InGaN) semiconductor and obtain the practical InGaN, by doping Si or Ge into the InGaN semiconductor represented in a specific general expression and growing it. CONSTITUTION:In a method of growing an indium gallium nitride compound semiconductor by a metal organic chemical vapor deposition (MOCVD) method, a gas of a gallium source, a gas of an indium source, a gas of a nitrogen source and a gas of a silicon source or a germanium source are used as a material gas, and further a carrier gas of the material gas is used as a nitrogen, and the indium gallium nitride semiconductor represented in a general expression InxGa1-NN (where 0<x (0.5) into which Si or Ge is doped is grown on a gallium nitride layer at a growth temperature of higher than 600 deg.C. A crystallizability and a quality of the semiconductor can be further improved and the practical InGaN is obtained, and a semiconductor material stacked in a blue luminescent device can be formed in a double hetero structure. |
