| 摘要 |
PURPOSE:To make it possible to implement a high luminance of an n junction light emitting diode using a silicon carbide by employing a reactive ion etching (RIE) method as a method of forming a current blocking part. CONSTITUTION:An n-type silicon carbide light emitting layer 20 and a p-type silicon carbide growth layer 30 are sequentially stacked on an n-type silicon carbide substrate 10. Then, an n-type silicon carbide layer 50 is grown and further an aluminum film 500 is deposited as an etching mask. This aluminum film 500 is patterned in the same shape as a current blocking part to be designed by a photolithography. When the patterned film 500 is etched by the same thickness as the n-type silicon carbide layer 50, that is, the current blocking layer using a reactive ion etching (RIE) method, the n-type current blocking layer 50 can be formed on only the part masked by the aluminum film 500. Thus, subsequently, by removing the aluminum film 500 and growing a p-type current diffusion layer 40, the n-type current blocking part 50 can be formed in the p-type silicon carbide layer 40. |
