| 摘要 |
<p>PURPOSE:To obtain a stable thin-film laminate of low stress by a method wherein, before a W film is formed by a CVD method, a W film is formed in advance by a sputtering method. CONSTITUTION:First, a silicon substrate 10 is prepared. By using a parallel-plate magnetron sputtering apparatus or the like, a sputtered W film 12 in a prescribed film thickness is formed on the silicon substrate 10. After that, a CVD-W film 14 in a prescribed film thickness is formed on the sputtered film by using a thermal CVD apparatus. In this manner, a W thin-film laminated body 16 is obtained by the sputtered film 12 and the CVD-W film 14. Thereby, it is possible to obtain the thin-film laminated body which is always stable an whose stress is low.</p> |
