| 摘要 |
<p>PURPOSE:To lower the generation rate of defects in a protection layer by preparing a thin film resistor element so that a thermal expansion rate of a heating resistor may approach a thermal expansion rate of an insulator area between the heating resistors. CONSTITUTION:An SiO2 is formed on the surface of the silicon wafer which is an element support member 5 and used as a lower layer 6 of an element 1. An HfB2 heating resistor 7 is formed this lower layer 6 by sputtering. Then, in those parts where the heating resistor 7 and electrodes 3 and 4 are not provided, a soda glass insulation layer 14 is formed by a sputtering so that its film thickens may be identical to that of the heating resistor 7. When the thermal expansion coefficient of the HfB2 heating resistor layer 7 is assumed as 1, the thermal expansion coefficient of the soda glass insulation layer 14 will fall in the range of 0.50 and over and 2.0 and below. Then, an SiO2-made protection film is laminated all over the element support member 5. This construction makes it possible to minimize an element whose protection film is expanded defectively and lower the defective rate of an ink jet cartridge.</p> |
