| 摘要 |
PURPOSE:To form a resist pattern high in sensitivity and image contrast and superior in the sectional form of the pattern, and especially, excellent in focal depth width characteristics and heat resistance and to enhance aptitude to ultrafine processing of semiconductor devices, such as IC and LSI and the like. CONSTITUTION:The positive type photosensitive resin composition is obtained by incorporating a compound represented by formula I or II as a photosensitive component in an alkali-soluble novolak type resin, and in formulae I and II, at least one of R<1> and R<2> is -OD<3> and the other is H or OH; at least one of D<1>, D<2>, and D<3> is a naphthoquinone-1,2-diazido-sulfonyl group and the others are H; and each of k, m, and n is an integer of 0-3. |
