| 摘要 |
PURPOSE:To provide a method wherein the optimum condition of an antireflection film is found out when a resist pattern is formed by an exposure operation using a single wavelength, to provide the formation method of the antireflection film by the method, to provide the formation method of a resist pattern using a new antireflection film and to provide the formation method of a thin film which can be used in the methods. CONSTITUTION:The optimum condition of an antireflection film is decided by the following means, and the antireflection film is formed. In addition, a proper antireflection film is found out by the means, and it is used to form a resist pattern. (I) The contour line of a quantity of absorption light is formed while the optical condition of the antireflection film as a parameter regarding a photoresist in an arbitrary film thickness is used as a parameter. (II) The same operation as in (I) is performed regarding a plurality of film thicknesses of the resist. (III) The common region of the quantity of absorption light is found out regarding each obtained track, and the optical condition of the antireflection film is decided. (IV) By changing the condition of the antireflection film, the same operation is performed, and the optical condition of the antireflection film is decided. (V) The optical condition such as the kind, the film thickness or the like of the antireflection film under a certain condition of the antireflection film is found out. |
