| 摘要 |
PURPOSE: To enhance a thin film transistor in reliability, by a method wherein an electric switch used for a liquid crystal display device is improved in function, a leakage current is prevented when the thin film transistor is driven, and an active semiconductor layer is improved in evenness so as to protect the wiring against disconnection. CONSTITUTION: A semiconductor layer 2, a first oxide film 3, and an antioxidizing film 8 are successively formed, the first oxide film 3 and the antioxidizing film 8 are selectively removed so as to be left unremoved only in an active region, the exposed part of the semiconductor layer 2 is thermally oxidized for the formation of a second oxide film 10, a gate 4 is formed at a prescribed position on the second oxide film 10, then the surface is thermally oxidized for the formation of a third oxide film 9, and the exposed part of the antioxidizing film 8 is removed. Ions are implanted in the semiconductor layer 2 to form a source/drain region 5, an insulating film 11 is evaporated on all the surface, a contact hole is bored in the source/drain region 5, and an electrode 7 is formed thereon.
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