| 摘要 |
PURPOSE:To prevent the fluctuation of the size of a pattern due to a multiple interference effect and to form the resist pattern remarkably improved in dimensional precision by forming an antireflection film having good film thickness controllability and provided with a sufficient antireflection effect. CONSTITUTION:The surface layer of a resist film 5 formed on a non-patterning film is chemically modified to form an antireflection layer 6, and the layer is selectively exposed and developed to form a resist pattern 9. Otherwise, the resist film 6 is formed on the resist film 5 formed on the non-patterning film, the film 6 is chemically modified to form an antireflection film 16, which is selectively exposed and developed to form a resist pattern 9. |
