| 摘要 |
<p>PURPOSE:To provide the active matrix substrate of a simple structure using thin-film transistors(TFTs) having good characteristics as switching elements by providing source lines consisting of metal on the lowermost layer and thinly forming semiconductor layers. CONSTITUTION:There are the semiconductor layers consisting of channel regions 101, source regions 102 and drain regions 103 on the lowermost layer on an insulating substrate. Pixel electrode take-out pads 105 consisting of the same metal as the metal of the data lines 104 are provided on the same layer. A part of the source regions 102 cover a part of the data lines 104 and a part of the drain regions 103 covers a part of the pixel electrode take-out pads 105 consisting of the metal. There are gate insulating films 106 to cover these semiconductor layers, metallic data lines 104 and metallic pixel electrode take- out pads 105. There are gate electrodes and lines 108 on the gate insulating films 106. Contact holes 107 are bored on metallic pads 105 in the gate insulating films 106 and pixel electrodes 109 are formed on the gate insulating films 106 via the contact holes 107.</p> |
