| 摘要 |
PURPOSE: To form both a complementary bipolar transistor and a CMOS on the same substrate by insulating elements in the lateral direction using a thin film SOI. CONSTITUTION: A first and a second layers 16, 17 made of dielectric material are formed on a three layered initial wafer 10 made of an insulating layer 11 held by two layers 12, 13 of semiconductor material. Next, a LOCOS insulating structure 20 is formed by photolithography and the growth of a oxide such as a silicon dioxide, etc. The corrosion in the lateral direction of the oxide is extremely small due to the nature of the thin film 13. Next, a plurality of insulating structures 20 are formed on the thin film 13, thereby forming a plurality of semiconductor islands and thin film semiconductor regions on the oxide insulating layer 11. In such a constitution, the plurality of semiconductor islands fills the roles of a bipolar junction transistor region 18, a MOS transistor region 19, a resistor region 80 and a MOS capacitor region 81 while the thin film semiconductor region specifies the bipolar junction transistor and the MOS transistor region.
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