| 摘要 |
PURPOSE: To flatten the surfaces above the recessed regions of a semiconductor easily by depositing a layer of a filler above pillars and the recessed regions, preventing deep recessions in the filler layer on the recessed regions, and flattening the filler layer. CONSTITUTION: A desired pattern of isolating trenches 20 is formed on a semiconductor substrate 10 using a resist 18. Next, silicon pillars 22 are oxidized and oxide pillars 24 are formed. And the isolating trenches 20 are filled up with a conformal CVD oxide 25. The oxide 25 forms approximately flattened projections, and its surface is perfectly flattened by grinding. Consequently, it becomes possible to prevent the generation of deep ressions in areas above the recessed regions of the isolating trenches 20, since subminimum structure with silicon pillars 22 separated is adopted. Accordingly, it becomes possible to approximately flatten the oxide 25 not having been ground yet, and to flatten the surface of the oxide filling up easily and perfectly.
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