| 摘要 |
PURPOSE:To provide a highly reliable semiconductor storage device which has a double-layer bit line construction wherein an interlayer insulating film is provided between two bit line layers by a method wherein bit line capacitances of the respective bit lines are made to be equal. CONSTITUTION:Bit lines 1a-1, 1b-1, 1c-1 and 1d-1 are connected to bit lines 1a-2, 1b-2, 1c-2 and 1d-2 respectively with contacts 2 which connect an upper layer to a lower layer so as to have the bit lines wired across the upper and lower layers and the bit lines are so arranged as to have the lengths of the respective bit lines in the upper layer and in the lower layer equal. At that time, as the bit lines are wired across the two layers, two bit lines are provided in a width in which three bit lines can be provided. By utilizing this fact, regions for the contacts 2 which connect the upper bit lines to the lower bit lines are secured, so that an area which must be added to have the bit layers wired across two layers can be reduced. |
