| 摘要 |
PURPOSE:To obtain a resist material having high sensitivity, high resolution, and high dry etching resistance with which a stable pattern dimension can be maintained by incorporating a specified polymer. CONSTITUTION:The resist material contains a polymer expressed by formula I, acid producing agent which can produce acid by irradiation of electron beams, and solvent which can dissolve these. In formula I, R<1> and R<6> are hydrogen atoms or methyl groups, R<2> and R<3> are hydrogen atoms or alkyl groups, R<4> is an alkyl group, haloalkyl group or aralkyl group, R<5> is a hydrogen atom or cyano group, and R<7> is a hydrogen atom, cyano group, -COOY (Y is an alkyl group) or formula II. In formula II, (Z) is a hydrogen atom, halogen atom, alkyl group, or alkoxy group, (k) and (l) are natural numbers satisfying 0.1<=k/(k+1)<=0.9 and (m) is (0) or natural number. When (m) is a natural number, (m) satisfies 0.05<=m/(k+l+m)<=0.50. |
