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发明名称
Verfahren zur Züchtung von Antimon-dotierten Silizium-Einkristallen.
摘要
申请公布号
DE69009719(D1)
申请公布日期
1994.07.14
申请号
DE19906009719
申请日期
1990.11.16
申请人
SHIN-ETSU HANDOTAI CO., LTD., TOKIO/TOKYO
发明人
SEKI, HIDETOSHI, TAKASAKI-SHI, GUNMA-KEN
分类号
C30B15/04;C30B15/00;C30B15/20;C30B15/30;C30B29/06;H01L21/208;(IPC1-7):C30B15/30
主分类号
C30B15/04
代理机构
代理人
主权项
地址
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