发明名称 |
Power semiconductor module with insulating substrate |
摘要 |
The insulating substrate contains metallised regions (2) and the module has power semiconductor component on the metallised regions. Connecting straps form outer module terminals. At least one contact (4.1,3) is inserted as a coupler between a coupling strap and a substrate metallising, or a power semiconductor component (3.1,2).Pref. the components to be linked to a contact has a soldered contact plate (7) on the electrode to be contacted, with a central intermediate member braised to the plate and soldered to the contact. The member is of the same material as the contact w.r.t. the expansion coefft. |
申请公布号 |
DE4300516(A1) |
申请公布日期 |
1994.07.14 |
申请号 |
DE19934300516 |
申请日期 |
1993.01.12 |
申请人 |
ABB-IXYS SEMICONDUCTOR GMBH, 6840 LAMPERTHEIM |
发明人 |
NEIDIG, ARNO, DIPL.-PHYS. DR., 6831 PLANKSTADT |
分类号 |
H01L23/498;H01L25/07 |
主分类号 |
H01L23/498 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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