Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente.,申请号DE19873789999-传众专利搜索

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发明名称	Photoresistverfahren zum reaktiven Ionenätzen von Metallmustern für Halbleiterbauelemente.
摘要
申请公布号	DE3789999(D1)	申请公布日期	1994.07.14
申请号	DE19873789999	申请日期	1987.07.07
申请人	INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y.	发明人	PROTSCHKA, HANS ADOLF, GAITHERSBURG MARYLAND 20878
分类号	H01L21/302;G03F7/00;G03F7/09;G03F7/11;G03F7/26;G03F7/42;H01L21/027;H01L21/30;H01L21/3065;H01L21/312;H01L21/3213;(IPC1-7):H01L21/312	主分类号	H01L21/302
代理机构		代理人
主权项
地址

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