Diamond and aluminium nitride solid-state laser with electron beam excitation

摘要

The fixed body laser is excited by means of electron beam bombardment. A semiconductor is used whose wavelength is less than 320 nm, e.g. diamond or aluminium nitride. Diamond is converted from an indirect band semiconductor by generating an attraction voltage of at least 0.3 eV per atom using electron beam or ion bombardment. The laser is pref. at least 1 micrometre thick and the min. pump current density is at least 30 amperes per square centimetre.