发明名称 Protection circuit used for deactivating a transistor during a short circuit having an inductive component.
摘要 <p>A protection circuit for a semiconductor switch (1) for switching a load (2) is disclosed. Control circuitry is used for switching the semiconductor switch on in response to a switching signal and for switching the semiconductor switch off in response to a deactivation signal. A deactivation circuit is used for generating the deactivation signal. An overvoltage detector circuit (7) responsive to a voltage at an output of the semiconductor switch that exceeds a predetermined value is used for generating an overvoltage signal. The overvoltage detector circuit includes a Zener diode that has its cathode coupled through a resistor to the output of the semiconductor switch and its anode coupled to the collector of the diode connected transistor. A first logic circuit (17) is used for causing the deactivation circuit to generate the deactivation signal in response to the switching signal and the overvoltage signal. The first logic circuit includes a first npn transistor that has its base coupled through a resistor to receive the switching signal. A second npn transistor receives the overvoltage signal through a resistor at its base. The collector of the first npn transistor is coupled to the collector of the second npn transistor. A third npn transistor has its base coupled to the collector of the second npn transistor. A first pnp transistor has its base coupled to the collector of the third npn transistor. One of the two collectors is coupled to the deactivation circuit. &lt;IMAGE&gt;</p>
申请公布号 EP0606160(A1) 申请公布日期 1994.07.13
申请号 EP19940300062 申请日期 1994.01.06
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 PEASE, ROBERT A.;SHIELDS, ROBIN
分类号 H03K17/08;H03K17/082;(IPC1-7):H03K17/08 主分类号 H03K17/08
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