| 发明名称 |
Method of making cmos integrated circuits. |
| 摘要 |
<p>The step height between the regions (5, 7) of different conductivity type in a twin tub CMOS process is reduced by oxidizing the exposed surface of the substrate prior to removal of the oxide regions (3, 9). <IMAGE></p> |
| 申请公布号 |
EP0605965(A2) |
申请公布日期 |
1994.07.13 |
| 申请号 |
EP19930309856 |
申请日期 |
1993.12.08 |
| 申请人 |
AT&T CORP. |
发明人 |
LEE, KUO-HUA;LIU, CHUN-TING |
| 分类号 |
H01L21/266;H01L21/3105;H01L21/8238;H01L27/092;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/266 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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