发明名称 PRODUCTION OF SILICON NITRIDE SINTERED COMPACT
摘要 PURPOSE:To obtain a silicon nitride sintered compact reduced in the variation in characteristics, by mixed molding of Si3O4 with a sintering auxiliary followed by calcining in an N2 atmosphere to form a specific open porosity, then calcining under a higher N2 gas pressure to effect lower open porosity and by sintering under a lower N2 gas pressure at elevated temperatures. CONSTITUTION:Si3O4 powder 0.3-1.5mum in mean particle diameter is mixed with a sintering auxiliary such as Y2O3 so as to account for 0.5-20wt.% of the total quantity followed by molding to specified shape. This form is calcined in an N2 gas atmosphere at <=2 atm at 1600-1700 deg.C to from an open porosity of <=2%. The resulting sintered compact is calcined in an N2 gas atmosphere at 30-200atm and at 1700-1900 deg.C to form an open porosity of <=1%. The resulting sintered compact is then calcined in an N2 gas atmosphere at 10-100atm which is lower than the pressure in the 2nd calcining process and at 1700-2000 deg.C which is higher than the temperature in the 2nd calcining process, and subsequently, if needed, heat-treated in an N2 gas atmosphere at <=1000atm at 1500-1900 deg.C to effect densification, thus obtaining the objective Si3N4 sintered compact reduced in the variation in characteristics even in its mass production.
申请公布号 JPH06191951(A) 申请公布日期 1994.07.12
申请号 JP19920347498 申请日期 1992.12.28
申请人 KYOCERA CORP 发明人 YOSHIDA MAKOTO
分类号 C04B35/584;C04B35/58;C04B35/64 主分类号 C04B35/584
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