发明名称 SIC REFRACTORY
摘要 PURPOSE:To obtain SiC refractory having excellent mechanical strength and improved thermal shock resistance. CONSTITUTION:This refractory comprises >=60wt.% SiC aggregate particles. The SiC refractory has 80-90wt.% theoretical density ratio and its grain boundary part consists of SiO2. The total amount of cristobalite existing as a subsidiary phase in the grain boundary part is 0.1-15.0wt.% based on the whole refractory.
申请公布号 JPH06191944(A) 申请公布日期 1994.07.12
申请号 JP19920347858 申请日期 1992.12.28
申请人 NGK INSULATORS LTD;N G K ADRECH KK 发明人 HANZAWA SHIGERU;KINOSHITA TOSHIHARU;YAMAKAWA OSAMU;MIZUNO KAZUHIRO
分类号 C04B35/565;C04B35/56 主分类号 C04B35/565
代理机构 代理人
主权项
地址