| 摘要 |
PURPOSE:To provide a silicon laminate applicable to the solar batter as it is by successively forming a conductive backing film and a polycrystalline silicon film on a heat-resistant metallic substrate. CONSTITUTION:A conductive primary film 12 is formed on a heat-resistant metallic substrate 11 of Mo, etc. The film 12 is formed of a conductive material selected from C, metals such as Ni, ZrB2 or TaB2 conductive ceramic, silicides such as Si, TiSi2, SiC and cermet. Further the film 12 is formed by sputtering method, hot CVD method, plasma CVD methed, solid phase growth method, melt recrystallization method, liquid phase growth method, etc. A polycrystalline silicon film 13 is then formed on the film 12 by sputtering, etc. Since the metallic substrate 11 functions as the rear electrode for power supply, the obtained silicon laminate 10 is applicable to the solar battery as such. |
