Antifuse with nonstoichiometric tin layer and method of manufacture thereof

摘要

An antifuse in an integrated circuit which has first and second conducting lines, a semiconductor layer of amorphous silicon between the first and second conducting lines, and a barrier metal layer of TiN between the semiconductor layer and the first conducting layer is disclosed. The TiN layer is nonstoichiometric composition to enhance the probability of said antifuse having a desired resistance when said antifuse is programmed. More specifically, the TiN layer has a composition of Ti1.0N0.5-0.8.