发明名称 |
Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers |
摘要 |
A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth layer of a highly doped n-type semiconducting material similar to the second layer. First and second electrical connections are provided to the fourth layer and to at least one of the first and second layers. A plurality of pairs of Dirac-delta doped monoatomic layers are in the third layer, with the first monoatomic layer of each pair being a layer of donors and with the second monoatomic layer of each pair being acceptors spaced from the donor layer and positioned on the side thereof facing the fourth layer.
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申请公布号 |
US5329150(A) |
申请公布日期 |
1994.07.12 |
申请号 |
US19930014980 |
申请日期 |
1993.02.08 |
申请人 |
MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WISSENSCHAFTEN E.V. |
发明人 |
SCHUBERT, ERDMANN;PLOOG, KLAUS;FISCHER, ALBRECHT |
分类号 |
H01L29/15;H01L29/36;H01L29/73;H01L29/772;H01L29/778;H01L29/864;H01L31/0352;H01L31/101;H01L33/06;H01S5/30;H01S5/34;(IPC1-7):H01L31/00;H01L31/075 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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