| 发明名称 |
Formation of semiconductor diamond |
| 摘要 |
Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.
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| 申请公布号 |
US5328855(A) |
申请公布日期 |
1994.07.12 |
| 申请号 |
US19920918961 |
申请日期 |
1992.07.24 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITABATAKE, MAKOTO;DEGUCHI, MASAHIRO;HIRAO, TAKASHI |
| 分类号 |
H01L21/04;(IPC1-7):H01L21/265;H01L21/268 |
主分类号 |
H01L21/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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