| 摘要 |
PURPOSE:To provide a semiconductor element having a small number of electrodes and manufacturing method thereof so as to constitute a light emitting diode having a plurality of light emitting layers whose light emitting central wave-length varies. CONSTITUTION:A double hetero-structure section 2 whose film thickness is around 100mum and comprises a P type clad layer 2a, a first light emitting layer 2b and an N type clad layer 2c is formed on a P type substrate not illustrated herein based on an LPE method. Then, a reaction layer 4, an N type clad layer 3a, a second light emitting layer 3b and a P type clad layer 3C are laminated selectively based on an MOCVD method one after another so that the light from an upper part light emitting layer 3b may be reflected and the light from the lower part light emitting layer 2b may be permeated. An N type electrode 6 is installed to an N type electrode formation surface formed with etching, a P type electrode 5 is installed to the whole bottom of the P type clad layer 2a and a P type electrode 7 is installed to the top of a P type clad layer 3c in this structure. |
