| 摘要 |
In ball bonding, a ball (112) is formed on the end of a wire (105) by an electric discharge between the wire (105) and a discharge electrode (116). The ball (112) is subsequently pressed onto a pad of a semiconductor pellet and bonded thereto by press bonding under heat with the application of ultrasonic vibrations. However, the pressing of the ball onto the pad may damage the pellet if the ball (112) is too hard. Therefore, a reducing gas (121) is supplied to the environs of the ball (112) during its formation, the gas being supplied at a temperature preferably between 100 DEG C and 200 DEG C. This shows the cooling of the ball (112) resulting in a finer cyrstal structure, and a lower hardness. Hence the occurrence of cracking of the pellet is reduced. |
