发明名称 CAPACITOR OF DRAM CELL AND ITS PREPARATION
摘要 PURPOSE: To sharply increase the capacitance of a capacitor and to improve a step coverage by constituting the capacitor of a lower electrode having many holes, a dielectric layer formed on the surface of the lower electrode and an upper electrode formed on the surface of the dielectric layer. CONSTITUTION: The capacitor consists of the lower electrode 32 having many holes 31 and the upper electrode 34 formed on the surface of the layer 33. For instance, a 1st conductive layer having rugged surface is formed, and after forming a 2nd insulating layer on the surface of the 1st conductive layer, the 2nd insulating layer is etched back until the projected part of the 1st conductive layer appears. Then the projected part of the 1st conductive layer is etched by using the 2nd insulating layer left in the recessed part of the 1st conductive layer as a mask to form many holes 31. Then the 2nd insulating layer is removed, and after working the 1st conductive layer as a prescribed shape, a dielectric layer 33 is formed on the surface of the 1st conductive layer.
申请公布号 JPH06188381(A) 申请公布日期 1994.07.08
申请号 JP19920240406 申请日期 1992.09.09
申请人 GOLD STAR ELECTRON CO LTD 发明人 SA KIYUN RAA;DON UON KIMU
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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