ITO FILM FORMATION METHOD FOR SEMICONDUCTOR PHOTOELECTRIC ELEMENT

摘要

PURPOSE:To reduce contact resistance between a semiconductor and an ITO film by forming the TTO film on a semiconductor photoelectric element which converts light to electricity and then heating the element to a specified temperature so as to anneal. CONSTITUTION:There is provided a transparent and high conductivity ITO film 24 made of In2O3-SnO2 on a cap layer 22. Metal electrodes 26 and 28 and mounted respectively to a part of the ITO film 24 and the bottom of a substrate 12. The ITO film 24 is formed on a cap layer 22 by sputtering while oxygen partial pressure is held at a temperature of 800 deg.C for five minutes under a nitrogen atmosphere of around 100ppm after the film is formed and then the film is annealed. Since the ITO film 24 is annealed after the film formation, the contact resistance against the cap layer 22 is lowered. This construction makes it possible to use a transparent ITO film for an electrode portion of a semiconductor photoelectric semiconductor.