发明名称 RESIN-SEALED HOLLOW SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To enhance the reliability and the yield of a semiconductor device by a method wherein a thermoset resin bonding material is formed at the bonding face of a base body to a lid body and at the side edge of the lid body, swelling of an internal gas is eliminated as well as production of a through hole. CONSTITUTION:A thermoset resin bonding material 9 is formed at the bonding face of a base body 2 to a lid body 5 and at the whole of the side edge 5A of the lid body 5. The thermoset resin bonding material 9 is formed in such a way that the lid body 5 is placed on the base body 2 and that the base body 2 and the lid body 5 are preheated simultaneously. Thereby, an internal gas between the base body 2 and the lid body 5 is prevented from swellings, production of a through hole is eliminated and it is possible to obtain a semiconductor device whose work is simple and whose reliability is high.</p>
申请公布号 JPH06188326(A) 申请公布日期 1994.07.08
申请号 JP19920339053 申请日期 1992.12.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 MORIGA MINASHIGE
分类号 H01L21/50;H01L23/10;(IPC1-7):H01L23/10 主分类号 H01L21/50
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