| 摘要 |
<p>PURPOSE:To eliminate a short-circuit failure of a TFT due to a step by burying a metal film serving as a metal wiring for making an electrode contact with the TFT in the surface of an insulating substrate and reduce a resistance value of the metal wiring remarkably by forming a large sectional area of the metal wiring. CONSTITUTION:First, protrusions 22 of a stamper 21 made of a polycarbonate resin are brought into contact with paste materials 23 containing Ta, and the paste materials 23 are bonded on the tops of the protrusions 22. On the other hand, a gel film 20 is applied to the surface of a soda-lime glass substrate 1. The side of the protrusions 22 of the stamper 21 is pushed on the surface of the gel film 20 and the glass substrate 1 is heat treated under this condition. The stamper 21 is removed and the glass substrate 1 is heat-treated and a glass body 25 is formed on the glass substrate 1. Next using an electrolytic plating process, a crystal growth of Ta films 26 is performed on recesses 24, and the surface is polished and the surfaces of the glass body 25 and the Ta films 26 are smoothed. Then, a TFT is formed on the glass substrate 1 and the Ta films 26 are used as a gate wiring and a gate electrode.</p> |
