发明名称 |
JIG FOR VERTICAL-TYPE SEMICONDUCTOR HEAT TREATMENT |
摘要 |
<p>PURPOSE:To improve the temperature follow-up property of a semiconductor wafer and the uniformity of a temperature distribution. CONSTITUTION:A plurality of nearly arc-shaped wafer-holding bodies 10 which are provided with cutout parts on the insertion side of a semiconductor wafer are arranged in a row and fixed on a plurality of support rods which are erected and installed between upper and lower end members. The wafer holding bodies 10 are formed of SiC or Si3N4 by a CVD method. A wafer mounting part 14 is formed as a sheet having a thickness of 100 to 1000mum, and a sheetlike reinforcement part 15 which is extended to the lower part is formed so as to be continued to the wafer mounting part 14.</p> |
申请公布号 |
JPH06188306(A) |
申请公布日期 |
1994.07.08 |
申请号 |
JP19920337160 |
申请日期 |
1992.12.17 |
申请人 |
TOSHIBA CERAMICS CO LTD |
发明人 |
INABA TAKESHI;SOTODANI EIICHI;TANAKA TAKASHI;SASAKI YASUMI |
分类号 |
H01L21/205;C23C16/01;C23C16/32;C23C16/34;C30B25/12;H01L21/22;H01L21/31;H01L21/673;H01L21/683;(IPC1-7):H01L21/68 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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