| 摘要 |
PURPOSE:To improve the reliability of capacity for stabilizing a high voltage for word wire driver. CONSTITUTION:In a semiconductor memory device containing a step-up circuit 400 constantly generating a high voltage and a word wire drive circuit (WDi) for transmitting a high voltage from the step-up circuit to a selection word wire 3, the capacitor for stabilizing the high voltage generated by the step-up circuit is made of a series body of a capacitive element utilizing FET having a gate insulation film thickness equivalent to an insulation gate type field effect transistor (FET) within the memory device. |
