SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To obtain a Bi-CMOS free from deterioration of bipolar transistor characteristics. CONSTITUTION:A bipolar transistor and a CMOSFET which are mutually isolated by a field oxide film 15 are formed on a semiconductor substrate 1. The gate electrode 67 of an NMOSFET and the gate electrode 69 of a PMOSFET are made thicker than the emitter electrode 38 of the bipolar transistor.