| 摘要 |
<p>PURPOSE:To easily obtain a desired chip interval in an expanding process by a method wherein the part of an adhesive layer on which a wafer has been pasted is irradiated with a radiation in a pattern shape and the part of the adhesive layer on which the wafer is not pasted is irradiated wholly with the radiation. CONSTITUTION:Since a part on which a wafer A is not pasted is irradiated wholly with a radiation, an adhesive layer 3 situated in the part progress in its hardening sufficiently. As a result, an expansion rate in an expanding process is lowered, and an excess expanding operation is made inessential. On the other hand, the adhesive layer 3 progresses in its hardening partially in a pattern shape in a part on which the wafer A is not pasted, but the adhesive layer 3 does not progress in its hardening sufficiently, and the expansion rate in the expanding process is not lowered so much. Consequently, when an adhesive sheet 1 for wafer pasting is expanded, the part on which the wafer has been pasted is expanded preferentially, and a sufficient chip interval can be obtained.</p> |
