| 摘要 |
PURPOSE:To effectively attain resolution of half-micron or below by adopting an i-beam exposure method and to form a resist pattern having very high resolution by a combination of the exposure method especially with a CEL method. CONSTITUTION:This photoresist compsn. consists essentially of an alkali-soluble resin and a photosensitive agent based on 1,2-naphthoquinone-2-diazidosulfonic ester represented by formula I or 1,2-naphthoquinone-2-diazidosulfonic ester represented by formula II. In the formulae I, II, each of R is 1,2- naphthoquinone-2-diazidosulfonyl or H, at least one of R is 1,2-naphthoquinone-2- diazidosulfonyl, (a) is 0-3, (b) is 0-3, (c) is 0-2 and (d) is 0-2 but (b) and (d) are not simultaneously 0. |
