OHMIC ELECTRODE, FORMATION THEREOF, AND LIGHT EMITTING ELEMENT

摘要

PURPOSE:To realize an ohmic electrode exhibiting high adhesion and low specific contact resistance to II-VI compound semiconductor. CONSTITUTION:An ohmic electrode composed of a metallic multilayer film having a Pd film at the lowermost layer is formed on a p-type ZnTe layer 2 by vacuum deposition. After formation of an ohmic electrode, annealing is effected, as required, at 100-300 deg.C. The ohmic electrode thus formed is employed as a p-side ohmic electrode for a semiconductor laser or a light emission diode employing a II-VI compound semiconductor.