| 摘要 |
PURPOSE:To provide a semiconductor device in which the precoating on the ridge of a mesa groove or the formation of a passivation film is complete, and a leak current is small and which is excellent in withstand voltage property by forming such a substrate for mounting a semiconductor element which is hardly subjected to the thermal stress of sealing resin at the pn junction between the gate and the drain of a mesa structure of semiconductor device, or forming a new structure in the element itself. CONSTITUTION:A semiconductor element 2 is mounted on a substrate 1 of metal or insulator, and a cavity is made in a ring-shaped protective wall using a metal or an insulator, or in the semiconductor element itself, and it is put to surround the primary structural section of the semiconductor element, and in case of cavity of the semiconductor element, junction coating resin of precoat material 8 is filled up in the cavity, and then, after hardening of it, they are molded integrally with the sealing resin such as epoxy resin or the like. |
